Influence of phonons on the electronic energy spectrum of small semiconductor quantum dots in a dielectric matrix

被引:0
作者
N. V. Tkach
R. B. Fartushinskii
机构
[1] Chernivtsi National University,
来源
Physics of the Solid State | 2003年 / 45卷
关键词
Spectroscopy; GaAs; Energy Spectrum; Electronic Energy; CuCl;
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学科分类号
摘要
A diagrammatic technique developed for Green’s functions with inclusion of multiphonon processes is used to investigate the electronic energy levels and the phonon replicas corresponding to them in a semiconductor quantum dot (QD) embedded in a dielectric matrix. It is shown, with reference to GaAs, CdSe, and CuCl quantum dots embedded in glass, that in the case of QD potential wells of a finite depth the shifts of the electronic energy levels decrease with decreasing QD size, irrespective of the strength of electron-phonon coupling in the nanoheterostructure. Theoretically calculated positions of the phonon replicas for CdSe in glass agree with the experimental data on Raman scattering.
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页码:1347 / 1354
页数:7
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