A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes

被引：0
作者：
K. Ding
Y. P. Zeng
X. C. Wei
Z. C. Li
J. X. Wang
H. X. Lu
P. P. Cong
X. Y. Yi
G. H. Wang
J. M. Li
机构：
[1] Chinese Academy of Sciences,Key Laboratory of Semiconductor Materials Science
[2] Chinese Academy of Sciences,Novel Material Center, Institute of Semiconductors
[3] Chinese Academy of Sciences,Research and Development Center for Semiconductor Lighting
来源：
Applied Physics B | 2009年 / 97卷
关键词：
85.60.Jb; 85.35.Be; 78.60.Fi;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels.
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页码：465 / 468
页数：3
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