Radiation hardness of porous silicon

被引：0
作者：
V. V. Ushakov
V. A. Dravin
N. N. Mel’nik
V. A. Karavanskii
E. A. Konstantinova
V. Yu. Timoshenko
机构：
[1] Russian Academy of Sciences,P. N. Lebedev Physics Institute
[2] Russian Academy of Sciences,Institute of General Physics
[3] M. V. Lomonosov Moscow State University,Physics Faculty
来源：
Semiconductors | 1997年 / 31卷
关键词：
Radiation; Silicon; Magnetic Material; Electromagnetism; Porous Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of irradiation by 300-keV Ar+ ions on the properties of electrochemically produced porous silicon is studied at doses of 5×1014–1×1016 cm−2. Raman scattering and photoluminescence data are used to show that the radiation hardness of porous silicon layers is substantially greater than that of single crystal silicon.
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页码：966 / 969
页数：3
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