Effect of CH3COOH on Hydrometallurgical Purification of Metallurgical-Grade Silicon Using HCl-HF Leaching

被引：0
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作者：
Chunjin Tian
Haifei Lu
Kuixian Wei
Wenhui Ma
Keqiang Xie
Jijun Wu
Yun Lei
Bin Yang
Kazuki Morita
机构：
[1] Kunming University of Science and Technology,The National Engineering Laboratory for Vacuum Metallurgy, State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization
[2] Kunming University of Science and Technology,Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities
[3] The University of Tokyo,Department of Materials Engineering, Graduate School of Engineering
来源：
JOM | 2018年 / 70卷
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摘要：
The present study investigated the effects of adding CH3COOH to HCl and HF used to purify metallurgical-grade Si (MG-Si). After 6 h of leaching MG-Si with an acid mixture consisting of 4 mol L−1 HCl, 3 mol L−1 HF, and 3 mol L−1 CH3COOH at 348 K, the total impurity removal efficiency was 88.5%, exceeding the 81.5% removal efficiency obtained without addition of CH3COOH. The microstructural evolution of Si after etching with the two lixiviants indicated better dissolution of metal impurities in MG-Si when using the HCl-HF-CH3COOH mixture. Furthermore, the leaching kinetics of Fe using the HCl-HF and HCl-HF-CH3COOH mixtures were observed to depend on the interfacial chemical reactions.
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页码：527 / 532
页数：5
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