Formation of Porous Silicon Filter Structures with Different Properties on Small Areas

被引:0
作者
R. Arens-Fischer
M. Krüger
M. Thönissen
V. Ganse
D. Hunkel
M. Marso
H. Lüth
机构
[1] Forschungszentrum Jülich GmbH,Institut für Schicht
来源
Journal of Porous Materials | 2000年 / 7卷
关键词
porous silicon; patterning; photolythography dielectric filters; reactive ion etching (RIE); microoptics;
D O I
暂无
中图分类号
学科分类号
摘要
Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and the time respectively. For micro-optical devices you need patterned PS. For some optical devices it is not sufficient to have only one filter but it is necessary to form filters with different properties on a small area. We applied a method (M. Frank, U.B. Schallenberg, N. Kaiser, and W. Buß, in Conference on Miniaturized Systems with Microoptics and Micromechanics, edited by M.E. Moamedi, L.J. Hornbeck, and K.S.J. Pister (SPIE, San Jose, 1997), SPIE Proceedings Series 3008, p. 265) to PS which fits this goal by the following steps: fabrication of the desired reflectors below each other and partial removal of upper reflectors with reactive ion etching (RIE). The technological aspects of patterning PS after the fabrication are an important topic of this work. Problems are discussed in detail and solutions are given.
引用
收藏
页码:223 / 225
页数:2
相关论文
共 50 条
[41]   Electrochemical Aspects of Porous Silicon Formation [J].
F. Ronkel ;
J.W. Schultze .
Journal of Porous Materials, 2000, 7 :11-16
[42]   Simulation of porous silicon structure formation [J].
Gorodetsky A.E. ;
Tarasova I.L. .
Mathematical Models and Computer Simulations, 2009, 1 (1) :124-130
[43]   Formation of porous silicon at elevated temperatures [J].
Balagurov, LA ;
Loginov, BA ;
Petrova, EA ;
Sapelkin, A ;
Unal, B ;
Yarkin, DG .
ELECTROCHIMICA ACTA, 2006, 51 (14) :2938-2941
[44]   Microspectrometer based on a tunable optical filter of porous silicon [J].
Lammel, G ;
Schweizer, S ;
Renaud, P .
SENSORS AND ACTUATORS A-PHYSICAL, 2001, 92 (1-3) :52-59
[45]   Optical properties of porous silicon.: Part II:: Fabrication and investigation of multilayer structures [J].
Kordás, K ;
Beke, S ;
Pap, AE ;
Uusimäki, A ;
Leppävuori, S .
OPTICAL MATERIALS, 2004, 25 (03) :257-260
[46]   Optical and Electrooptical Properties of Porous-Silicon/Conjugated-Polymer Composite Structures [J].
Nahor, Amit ;
Shalev, Itai ;
Sa'ar, Amir ;
Yitzchaik, Shlomo .
EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, 2015, (07) :1212-1217
[47]   The Effect of Porous Silicon Oxidation on Electrochemical Formation of Porous Silicon-Indium Nanocomposites [J].
Grevtsov, N. L. ;
Chubenko, E. B. ;
Bondarenko, V. P. ;
Gavrilin, I. M. ;
Dronov, A. A. ;
Gavrilov, S. A. .
TECHNICAL PHYSICS LETTERS, 2021, 47 (04) :341-343
[48]   Characterization of ITO/porous silicon LED structures [J].
Molnár, K ;
Mohácsy, T ;
Varga, P ;
Vázsonyi, É ;
Bársony, I .
LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 :91-97
[49]   Characterization of ITO porous silicon LED structures [J].
Molnár, K ;
Mohácsy, T ;
Varga, P ;
Vázsonyi, É ;
Bársony, I .
JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) :91-97
[50]   Porous Silicon Structures as Optical Gas Sensors [J].
Levitsky, Igor A. .
SENSORS, 2015, 15 (08) :19968-19991