Formation of Porous Silicon Filter Structures with Different Properties on Small Areas

被引:0
作者
R. Arens-Fischer
M. Krüger
M. Thönissen
V. Ganse
D. Hunkel
M. Marso
H. Lüth
机构
[1] Forschungszentrum Jülich GmbH,Institut für Schicht
来源
Journal of Porous Materials | 2000年 / 7卷
关键词
porous silicon; patterning; photolythography dielectric filters; reactive ion etching (RIE); microoptics;
D O I
暂无
中图分类号
学科分类号
摘要
Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and the time respectively. For micro-optical devices you need patterned PS. For some optical devices it is not sufficient to have only one filter but it is necessary to form filters with different properties on a small area. We applied a method (M. Frank, U.B. Schallenberg, N. Kaiser, and W. Buß, in Conference on Miniaturized Systems with Microoptics and Micromechanics, edited by M.E. Moamedi, L.J. Hornbeck, and K.S.J. Pister (SPIE, San Jose, 1997), SPIE Proceedings Series 3008, p. 265) to PS which fits this goal by the following steps: fabrication of the desired reflectors below each other and partial removal of upper reflectors with reactive ion etching (RIE). The technological aspects of patterning PS after the fabrication are an important topic of this work. Problems are discussed in detail and solutions are given.
引用
收藏
页码:223 / 225
页数:2
相关论文
共 50 条
[31]   The Effect of Porous Silicon Oxidation on Electrochemical Formation of Porous Silicon–Indium Nanocomposites [J].
N. L. Grevtsov ;
E. B. Chubenko ;
V. P. Bondarenko ;
I. M. Gavrilin ;
A. A. Dronov ;
S. A. Gavrilov .
Technical Physics Letters, 2021, 47 :341-343
[32]   Demonstration of the formation of porous silicon films with superior mechanical properties, morphology and stability [J].
Sharma, SN ;
Sharma, RK ;
Bhagavannarayana, G ;
Samanta, SB ;
Sood, KN ;
Lakshmikumar, ST .
MATERIALS LETTERS, 2006, 60 (9-10) :1166-1169
[33]   Porous silicon:: Electonic properties [J].
Beltrán, MR ;
Wang, C ;
Cruz, M ;
Tagüeña-Martínez, J .
REVISTA MEXICANA DE FISICA, 1999, 45 :155-157
[34]   Modelling of porous silicon formation process [J].
Haurylau, M .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2001, 15 (1-2) :117-119
[35]   Macro porous silicon formation for micromachining [J].
Ohji, H ;
Lahteenmaki, S ;
French, PJ .
MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY III, 1997, 3223 :189-197
[36]   Electrochemical aspects of porous silicon formation [J].
Ronkel, F ;
Schultze, JW .
JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) :11-16
[37]   Thermoelectric properties of porous silicon [J].
J. de Boor ;
D. S. Kim ;
X. Ao ;
M. Becker ;
N. F. Hinsche ;
I. Mertig ;
P. Zahn ;
V. Schmidt .
Applied Physics A, 2012, 107 :789-794
[38]   Optical properties of porous silicon [J].
Theiss, W .
SURFACE SCIENCE REPORTS, 1997, 29 (3-4) :95-192
[39]   Kinetics of Crack Formation in Porous Silicon [J].
Gaev, D. S. ;
Rekhviashvili, S. Sh. .
SEMICONDUCTORS, 2012, 46 (02) :137-140
[40]   Kinetics of crack formation in porous silicon [J].
D. S. Gaev ;
S. Sh. Rekhviashvili .
Semiconductors, 2012, 46 :137-140