Comparison of functionalized AlGaN/GaN HEMT sensor for the detection of various heavy metal ions

被引：0
作者：
Xuecheng Jiang
Chunlei Wei
Yan Gu
Xiaohu Dong
Zhijian Xie
Qi Zhang
Chun Zhu
Weiying Qian
Naiyan Lu
Guoqing Chen
Guofeng Yang
机构：
[1] Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology,School of Science
[2] Jiangnan University,undefined
[3] Wuxi Kelaiwo Intelligent Equipment Co.,undefined
[4] Ltd.,undefined
[5] Jiangsu Xinguanglian Technology Co.,undefined
[6] Ltd.,undefined
来源：
Applied Physics A | 2022年 / 128卷
关键词：
AlGaN/GaN HEMT; Sensor; Heavy metal ion; Sensitivity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report and compare a sensitive heavy metal ion sensor for copper ion (Cu2+), iron ion (Fe3+), lead ion (Pb2+) and cadmium ion (Cd2+) detection. The sensor consists of AlGaN/GaN high electron mobility transistor (HEMT) with L-cysteine functionalized active region on the gate. The sensor exhibits fast and stable response after the introduction of various heavy metal ions ranging from 0 mg/L to 20 mg/L to combine with the modifier to form stable complexes. The current response of the HEMT device shows a related behavior that decreases with increasing concentration of introduced heavy metal ions. Furthermore, the AlGaN/GaN HEMT-based sensor exhibited high sensitivities of 92.32 µA/(mg/L), 760.22 µA/(mg/L), 137.05 µA/(mg/L) and 63.63 µA/(mg/L) for the detection of Cu2+, Fe3+, Pb2+ and Cd2+, respectively. Therefore, the proposed functionalized AlGaN/GaN HEMT device displays potential in the application of efficient, fast and convenient detection of heavy metal ions.
引用
收藏
相关论文
共 252 条
[21]  
Superville PJ(2010)Micro optical sensors based on avalanching silicon light-emitting devices monolithically integrated on chips ECS Trans. 33 3-Q183
[22]  
Billon G(2008)Surface Immobilizations of AlGaN/GaN High Electron Mobility Transistor Based Sensors J. Appl. Phys. 104 031101-114003-3
[23]  
Baeyens W(2015)Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors IEEE Microw. Mag. 16 97-668
[24]  
Gao Y(2010)GaN HEMT: dominant force in high-frequency solid-state power amplifiers Prog. Mater. Sci. 55 1-3421
[25]  
Gumpu MB(2017)Recent advances in wide bandgap semiconductor biological and gas sensors AIP Adv. 7 085015-112
[26]  
Sethuraman S(2013)Effect of self-heating on electrical characteristics of AlGaN/GaN HEMT on Si (111) substrate Appl. Phys. Lett. 102 074102-2170
[27]  
Krishnan UM(2011)Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications IEEE Trans. Elect. Dev. 58 3622-2870
[28]  
Rayappan JBB(2001)A physics-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices IEEE Trans. Elect. Dev. 48 696-7
[29]  
Lin Y(2010)Charge-trap memory device fabricated by oxidation of Si1-xGex IEEE Sens. J. 10 64-139
[30]  
Gritsenko D(2016)Wireless detection system for Glucose and pH sensing in exhaled breath condensate using AlGaN/GaN high electron mobility transistors Anal. Chim. acta 943 1-J153
12345678910