Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

被引：0
|
作者：
B. R. Semyagin
A. V. Kolesnikov
M. A. Putyato
V. V. Preobrazhenskii
T. B. Popova
V. I. Ushanov
V. V. Chaldyshev
机构：
[1] Rzhanov Institute of Semiconductor Physics,
[2] Siberian Branch,undefined
[3] Russian Academy of Sciences,undefined
[4] Ioffe Institute,undefined
来源：
Semiconductors | 2023年 / 57卷
关键词：
gallium arsenide; bismuth; molecular-beam epitaxy; bandgap;
D O I：
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学科分类号：
摘要：
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页码：405 / 409
页数：4
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