Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

被引：0

作者：

B. R. Semyagin

A. V. Kolesnikov

M. A. Putyato

V. V. Preobrazhenskii

T. B. Popova

V. I. Ushanov

V. V. Chaldyshev

机构：

[1] Rzhanov Institute of Semiconductor Physics,

[2] Siberian Branch,undefined

[3] Russian Academy of Sciences,undefined

[4] Ioffe Institute,undefined

来源：

Semiconductors | 2023年 / 57卷

关键词：

gallium arsenide; bismuth; molecular-beam epitaxy; bandgap;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：405 / 409

页数：4

共 113 条

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