InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µm

被引：0
|
作者：
T. N. Danilova
A. P. Danilova
O. G. Ershov
A. H. Imenkov
N. M. Kolchanova
M. V. Stepanov
V. V. Sherstnev
Yu. P. Yakovlev
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Semiconductors | 1997年 / 31卷
关键词：
Recombination; Auger; Magnetic Material; Diode Laser; Operating Temperature;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Diode lasers based on InAsSb/InAsSbP with separate electrical and optical confinement, emitting in the wavelength interval 3–4 µm, are investigated. The lasers attain a higher operating temperature when electrical confinement is created by means of type-II heterojunctions. Interface Auger recombination is suppressed in lasers of this type, and the experimental current density is close to the theoretically calculated value for the case of predominant volume Auger recombination at a temperature of 180–220 K.
引用
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页码：831 / 834
页数：3
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