Atomic Layer Deposition of AlN Thin Films on GaN and Electrical Properties in AlN/GaN Heterojunction Diodes

被引:0
|
作者
Hogyoung Kim
Hee Ju Yun
Seok Choi
Byung Joon Choi
机构
[1] Seoul National University of Science and Technology,Department of Visual Optics
[2] Seoul National University of Science and Technology,Department of Materials Science and Engineering
来源
Transactions on Electrical and Electronic Materials | 2020年 / 21卷
关键词
AlN thin films; Electron transport mechanisms; Defective interfacial layer;
D O I
暂无
中图分类号
学科分类号
摘要
AlN thin films were deposited with different thicknesses (5 and 20 nm) by atomic layer deposition and we explored the electron transport mechanisms in AlN/GaN Schottky junctions. Higher ideality factor and higher m values were observed in the current–voltage plots when the thickness of the AlN was 5 nm. The reverse bias leakage current for 5-nm-thick AlN was explained based on the Poole–Frenkel emission. Capacitance–voltage analysis revealed a higher interface state density for 5 nm thick AlN. These results might be associated with the defective interfacial layer present near the AlN/GaN interface. Because of the strain relaxation, the upper region of the AlN layer was degraded in the case of 20-nm-thick AlN, which may have strongly affected the interfacial properties of the Pt/AlN junction strongly.
引用
收藏
页码:621 / 629
页数:8
相关论文
共 50 条
  • [21] BARRIER HEIGHT ENHANCED GaN SCHOTTKY DIODES USING A THIN AlN SURFACE LAYER
    Chuah, L. S.
    Hassan, Z.
    Abu Hassan, H.
    Yam, F. K.
    Chin, C. W.
    Thahab, S. M.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2008, 22 (29): : 5167 - 5173
  • [22] Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
    Lu Yuan-Jie
    Feng Zhi-Hong
    Lin Zhao-Jun
    Gu Guo-Dong
    Dun Shao-Bo
    Yin Jia-Yun
    Han Ting-Ting
    Cai Shu-Jun
    CHINESE PHYSICS B, 2014, 23 (02)
  • [23] Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
    吕元杰
    冯志红
    林兆军
    顾国栋
    敦少博
    尹甲运
    韩婷婷
    蔡树军
    Chinese Physics B, 2014, (02) : 425 - 429
  • [24] Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
    Hogyoung Kim
    Hee Ju Yoon
    Byung Joon Choi
    Nanoscale Research Letters, 2018, 13
  • [25] Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
    Kim, Hogyoung
    Yoon, Hee Ju
    Choi, Byung Joon
    NANOSCALE RESEARCH LETTERS, 2018, 13
  • [26] Dielectric function of wurtzite GaN and AlN thin films
    H Division, Phys. Direct., Lawrence Livermore N., Livermore, CA 94550, United States
    不详
    不详
    不详
    Solid State Commun, 3 (129-133):
  • [27] Dielectric function of wurtizite GaN and AlN thin films
    Benedict, LX
    Wethkamp, T
    Wilmers, K
    Cobet, C
    Esser, N
    Shirley, EL
    Richter, W
    Cardona, M
    SOLID STATE COMMUNICATIONS, 1999, 112 (03) : 129 - 133
  • [28] Influence of AlN Buffer Layer Deposition Temperature on Properties of GaN HVPE Layers
    Prazmowska, J.
    Korbutowicz, R.
    Wosko, M.
    Paszkiewicz, R.
    Kovac, J.
    Srnanek, R.
    Tlaczala, M.
    ACTA PHYSICA POLONICA A, 2009, 116 : S123 - S125
  • [29] AlN/GaN/AlN double heterostructures with thin AlN top barriers
    Zervos, Ch.
    Bairamis, A.
    Adikimenakis, A.
    Kostopoulos, A.
    Kayambaki, M.
    Tsagaraki, K.
    Konstantinidis, G.
    Georgakilas, A.
    2014 10TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM), 2014, : 113 - 116
  • [30] Properties of AlN Thin Films on p-Ge Deposited by Thermal Atomic Layer Deposition
    Kim H.
    Yoon H.J.
    An S.C.
    Do Kim N.
    Choi B.J.
    Kim, Hogyoung (hogyoungkim@gmail.com), 2018, Korean Institute of Electrical and Electronic Material Engineers (19) : 462 - 466