High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

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作者：
Weihuang Yang
Jinchai Li
Yong Zhang
Po-Kai Huang
Tien-Chang Lu
Hao-Chung Kuo
Shuping Li
Xu Yang
Hangyang Chen
Dayi Liu
Junyong Kang
机构：
[1] Xiamen University,Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics
[2] University of North Carolina at Charlotte,Department of Electrical and Computer Engineering and Center for Optoelectronics
[3] National Chiao-Tung University,Department of Photonics and Institute of Electro
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Scientific Reports | / 4卷
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摘要：
High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 109 cm−2) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature.
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