Modulation waves of charge carriers in n- and p-type semiconductor layers

The effect of the carrier mobility dependence on the electric field strength, μ(F), on the propagation of waves of injected carriers in n- and p-type layers in the quasi-neutral drift mode has been studied. It is shown that consideration of the dependence μ(F) differently affects the motion of minority carriers in n- and p-type layers. The motion of an electron wave in the p-type base of a p+-p-n+ structure is slowed down, and that of a hole wave in the n-base of a p+-n-n+ structure is speeded up. The results obtained supplement the previously suggested classical description of the propagation of a wave of minority carriers, which disregarded the effect of μ(F) dependences. The results of an analytical calculation are confirmed using a numerical experiment.