Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

被引：0
作者：
Changcheng Hu
Huiqi Ye
Gang Wang
Haitao Tian
Wenxin Wang
Wenquan Wang
Baoli Liu
Xavier Marie
机构：
[1] Jilin University,School of Physics
[2] Chinese Academy of Sciences,Beijing National Laboratory for Condensed Matter Physics, Institute of Physics
[3] Université de Toulouse,INSA
来源：
Nanoscale Research Letters | / 6卷
关键词：
GaAs; Pump Power; Probe Beam; Excitation Power; Spin Diffusion;
D O I：
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中图分类号：
学科分类号：
摘要：
Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.
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