Local Structure and Valence State of Mn in Ga1−xMnxN Epilayers

被引：0

作者：

X. Biquard

O. Proux

J. Cibert

D. Ferrand

H. Mariette

R. Giraud

B. Barbara

机构：

[1] DRFMC-SP2M,

[2] CEA Grenoble,undefined

[3] 17,undefined

[4] av. des Martyrs,undefined

[5] Laboratoire de Cristallographie,undefined

[6] CEA-CNRS-UJF Grenoble Group “Nanophysique et Semi-conducteurs,undefined

[7] ” Laboratoire de Spectrométrie Physique,undefined

[8] BP 87,undefined

[9] Laboratoire de Magnétisme Louis Néel,undefined

[10] BP 166,undefined

来源：

Journal of Superconductivity | 2003年 / 16卷

关键词：

EXAFS; XANES; Mn; GaN; magnetic semiconductor;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Mn has been incorporated in epilayers of the large-gap semiconductor GaN grown by molecular beam epitaxy using a nitrogen plasma cell. Detailed extended X-ray absorption fine structure (EXAFS) studies of a Ga0.98Mn0.02N epilayer confirm that the Mn atoms substitute the Ga atoms, with an increase by 2.7% of the distance to the nearest nitrogen atoms. Near-edge spectroscopy results tend to indicate that the valence state of Mn is slightly higher than 3+, while EXAFS analysis suggests an electron transfer to the N neighbors.

引用

页码：127 / 129

页数：2

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