Luminescence of thulium-activated cubic boron nitride

被引:0
作者
E. M. Shishonok
L. Trinkler
S. V. Leonchik
B. Berzinya
机构
[1] Scientific Production Association/Belarus Scientific and Applied Materials Research Center,Institute of Solid State Physics
[2] Latvian University,undefined
来源
Journal of Applied Spectroscopy | 2008年 / 75卷
关键词
cubic boron nitride; photoluminescence; photoluminescence excitation spectrum; thulium; electronic transitions;
D O I
暂无
中图分类号
学科分类号
摘要
Under high pressure and temperature conditions, we have obtained samples of thulium-activated cubic boron nitride in the form of micropowders, ceramics, and polycrystals activated by thulium in the presence of aluminum. We studied the cathodoluminescence (CL), photoluminescence (PL), and photoluminescence excitation spectra of the samples. In the luminescence spectra we observe structured bands with maxima at ∼370, ∼475, ∼660, and ∼ 800 nm, assigned to electronic transitions in the triply charged thulium ions. We have established that the most efficient method for excitation of “blue” luminescence at ∼475 nm for thulium ions in cBN is excitation by an electron beam. The cBN samples synthesized in the presence of Al have photoluminescence spectra with a more complex structure compared with samples not containing Al, with the band of dominant intensity at about 660 nm. Hypothetically, this is a consequence of incorporation of thulium ions into the crystalline phases cBN and AlN, which are equally likely to be formed during synthesis. The observed photoluminescence spectrum of the indicated samples is the superposition of the photoluminescence spectra of the Tm3+ ions located in the crystal fields of cBN and AlN of different symmetries. The presence in the photoluminescence excitation spectra (at 450, 490, and 660 nm) of structure, with features at wavelengths shorter than the excited photoluminescence, suggests a nonresonant mechanism for its excitation. We have established that luminescence of Tm3+ ions is less intense than for other rare earth elements incorporated into cubic boron nitride.
引用
收藏
页码:567 / 575
页数:8
相关论文
共 60 条
  • [1] Tanabe S.(1994)undefined J. Appl. Phys. 76 3730-3734
  • [2] Hanada T.(1995)undefined Appl. Phys. Lett. 66 410-412
  • [3] Chwalek J.(1997)undefined J. Opt. Soc. Am. B 14 1213-1218
  • [4] Paz-Pujalt G.(2001)undefined J. Appl. Phys. 90 6550-6552
  • [5] Paschotta R.(2002)undefined J. Appl. Phys. 91 954-959
  • [6] dos Santos P. V.(2002)undefined J. Appl. Phys. 92 6337-6339
  • [7] Vermelho M. V. D.(2003)undefined Appl. Phys. Lett. 83 4746-4748
  • [8] Gouvela E. A.(1999)undefined Appl. Phys. Lett. 75 2184-2186
  • [9] Qiu J.(2002)undefined Appl. Phys. Lett. 81 2331-2333
  • [10] Kawamoto Y.(1999)undefined Appl. Phys. Lett. 74 1129-1131