Growing nanocrystalline silicon on sapphire by molecular beam epitaxy

被引：0
|
作者：
D. A. Pavlov
P. A. Shilyaev
E. V. Korotkov
N. O. Krivulin
机构：
[1] Nizhni Novgorod State University,
来源：
Technical Physics Letters | 2010年 / 36卷
关键词：
Sapphire; Molecular Beam Epitaxy; Sapphire Substrate; Vapor Phase Epitaxy; Pyramidal Shape;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is established that an array of silicon nanoislands is formed on the surface of a sapphire substrate at the initial stages of molecular beam epitaxy. Silicon islands formed at low temperatures of the substrate (below 650°C) exhibit a pyramidal shape, while the islands grown at T > 650° possess a dome shape. The maximum density of islands was 2 × 1011 cm−2, their lateral dimensions were within 20 nm, and their heights did not exceed 3 nm.
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页码：548 / 550
页数：2
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