Enhanced dielectric properties of Bi1.5ZnNb1.5O7 thick films via cold isostatic pressing

Dense Bi1.5ZnNb1.5O7 thick films were prepared on Ag/Al2O3 substrates using screen-printing technology at a lower temperature of 825 °C. A novel pretreatment of cold isostatic pressing was introduced to enhance the quality of thick films. After cold isostatic pressing prior to sintering, the microstructure of thick films was improved with a more compact morphology and better dielectric properties, and the permittivity and dielectric loss of thick films sintered at 900 °C were about 160 and 0.006. The obvious tunability of thick films was also observed, and the tunability value reached about 3 % for thick films sintered at 900 °C under 400 kV/cm. The enhanced properties and low-temperature sintering made this compound a potential candidate for Low Temperature Co-fired Ceramic (LTCC).