Background doping of films in molecular beam epitaxy of silicon

被引：0
|
作者：
B. Z. Kanter
A. I. Nikiforov
O. P. Pchelyakov
机构：
[1] Siberian Branch of the Russian Academy of Sciences,Institute of Semiconductor Physics
来源：
Technical Physics Letters | 1998年 / 24卷
关键词：
Silicon; Molecular Beam Epitaxy; Molecular Beam; Unique Result; Active Background;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Unique results obtained as a result of the development of epitaxial silicon layers with an extremely low concentration of background impurities for infrared photodetectors with blocked impurity photoconduction are analyzed and generalized. Changes in the type and concentration of electrically active background impurities in films grown by molecular beam epitaxy were investigated at all stages in the operation of the system, from initial startup to the fabrication of films having an extremely low level of background impurities <4×1013 cm−3. The laws governing the changes in the type and level of background doping during operation of the system and the mechanism responsible for these changes are established.
引用
收藏
页码：91 / 93
页数：2
相关论文
共 50 条
  • [41] Carrier transport characteristics in PbSrSe thin films grown by molecular beam epitaxy
    H.F. Yang
    W.Z. Shen
    K. Wang
    Q.J. Pang
    Applied Physics A, 2003, 77 : 475 - 479
  • [42] Sublimation molecular beam epitaxy of silicon-based structures
    V. P. Kuznetsov
    Z. F. Krasil’nik
    Semiconductors, 2010, 44 : 396 - 400
  • [43] Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate
    Reznik, R. R.
    Kotlyar, K. P.
    Kryzhanovskaya, N. V.
    Morozov, S. V.
    Cirlin, G. E.
    TECHNICAL PHYSICS LETTERS, 2019, 45 (11) : 1111 - 1113
  • [44] Photoluminescence of erbium-oxygen-codoped silicon multilayers prepared by molecular beam epitaxy
    Xu, F
    Fan, YL
    Jiang, ZM
    THIN SOLID FILMS, 2006, 496 (02) : 500 - 504
  • [45] Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate
    R. R. Reznik
    K. P. Kotlyar
    N. V. Kryzhanovskaya
    S. V. Morozov
    G. E. Cirlin
    Technical Physics Letters, 2019, 45 : 1111 - 1113
  • [46] Molecular-beam epitaxy of ultrathin Si films on sapphire
    Shilyaev, P. A.
    Pavlov, D. A.
    Korotkov, E. V.
    Treushnikov, M. V.
    MICRO- AND NANOELECTRONICS 2007, 2008, 7025
  • [47] AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates
    Cirlin, G. E.
    Reznik, R. R.
    Shtrom, I., V
    Khrebtov, A., I
    Soshnikov, I. P.
    Kukushkin, S. A.
    Leandro, L.
    Kasama, T.
    Akopian, Nika
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (48)
  • [48] Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films
    Natali, F.
    Vezian, S.
    Granville, S.
    Damilano, B.
    Trodahl, H. J.
    Anton, E. -M.
    Warring, H.
    Semond, F.
    Cordier, Y.
    Chong, S. V.
    Ruck, B. J.
    JOURNAL OF CRYSTAL GROWTH, 2014, 404 : 146 - 151
  • [49] Thin InSb films on GaAs substrates by molecular beam epitaxy
    Li, Zhanguo
    Liu, Guojun
    Li, Mei
    You, Minghui
    Li, Lin
    Xiong, Min
    Wang, Yong
    Zhang, Baoshun
    Wang, Xiaohua
    Japanese Journal of Applied Physics, 2008, 47 (1 PART 2): : 558 - 560
  • [50] Growth of CrTe thin films by molecular-beam epitaxy
    Sreenivasan, MG
    Hou, XJ
    Teo, KL
    Jalil, MBA
    Liew, T
    Chong, TC
    THIN SOLID FILMS, 2006, 505 (1-2) : 133 - 136
12345