The transition from 2D to 3D nanoclusters of silicon carbide on silicon

被引：0

作者：

Yu. V. Trushin

K. L. Safonov

O. Ambacher

J. Pezoldt

机构：

[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute

[2] TU Ilmenau,Zentrum Für Mikro

来源：

Technical Physics Letters | 2003年 / 29卷

关键词：

Silicon; Carbide; Average Distance; Silicon Carbide; Molecular Beam Epitaxy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have evaluated the critical average distance between the nanoclusters of silicon carbide grown by molecular beam epitaxy on silicon and estimated the time of the transition from two-to three-dimensional growth.

引用

页码：663 / 665

页数：2

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Lindner J.(undefined)undefined undefined undefined undefined-undefined

[7]

Pezoldt J.(undefined)undefined undefined undefined undefined-undefined

[8]

Safonov K. L.(undefined)undefined undefined undefined undefined-undefined

[9]

Kulikov D. V.(undefined)undefined undefined undefined undefined-undefined

[10]

Trushin Yu. V.(undefined)undefined undefined undefined undefined-undefined

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