Radiation-induced defects in thin Cu(In,Ga)Se2 films on exposure to high-energy electron irradiation

被引：4
作者：
A. V. Mudryi
V. F. Gremenok
A. V. Ivanyukovich
M. V. Yakushev
Ya. V. Feofanov
机构：
[1] National Academy of Sciences of Belarus,Institute of Solid State and Semiconductor Physics
[2] Strathclyde University,undefined
来源：
Journal of Applied Spectroscopy | 2005年 / 72卷 / 6期
关键词：
Cu(In,Ga)Se; photoluminescence; electron irradiation; defects;
D O I：
10.1007/s10812-006-0020-5
中图分类号：
学科分类号：
摘要：
At 4.2 K, the photoluminescence spectra of Cu(In,Ga)Se2 films irradiated by electrons with an energy of 5 MeV displayed the 0.93-and 0.79-eV bands that owe their origin to the radiative recombination of nonequilibrium charge carriers on radiation-induced defects. The position of the energy levels of the defects is determined and their nature is discussed.
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页码：883 / 886
页数：3
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