Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates

被引：0

作者：

G. V. Astakhov

V. P. Kochereshko

D. G. Vasil’ev

V. P. Evtikhiev

V. E. Tokranov

I. V. Kudryashov

G. V. Mikhailov

机构：

[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute

来源：

Semiconductors | 1999年 / 33卷

关键词：

Magnetic Field; GaAs; Magnetic Material; External Magnetic Field; Molecular Beam Epitaxy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substrate with a disorientation in the [010] direction are studied. A redistribution of the photoexcited carriers among different groups of dots under the influence of the magnetic field is observed. The concentration of quantum dots is determined by analyzing the data.

引用

页码：988 / 990

页数：2

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