A Novel Deep Gate LDMOS Structure Using Double P-Trench to Improve the Breakdown Voltage and the On-State Resistance

被引：0
作者：
Amir Gavoshani
Ali A. Orouji
Abdollah Abbasi
机构：
[1] Semnan University,Electrical and Computer Engineering Department
来源：
Silicon | 2022年 / 14卷
关键词：
SOI-LDMOS; P-trench; Breakdown voltage; Maximum temperature; Deep gate; On-state resistance;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
To increase the breakdown voltage and reduce the on-state resistance, a novel Lateral Double Diffused Metal Oxide Semiconductor (LDMOS) field-effect transistor is proposed in this paper. In the proposed structure, double P-trenches are inserted in the buried oxide under the source and drain regions. The proposed device is called as the double p-trench deep gate LDMOS (DPTDG-LDMOS). By optimizing the P-trenches, the electric field will be more uniform, and so the maximum breakdown voltage obtains. Our simulation results show that the breakdown voltage, on-state resistance, maximum temperature (TMAX), and figure of merit (FOM) for the DPTDG-LDMOS are improved in comparison with a conventional LDMOS.
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页码：597 / 602
页数：5
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