3He impurity effects on the growth kinetics of4He crystals

被引：0

作者：

M. Suzuki

M. Thiel

P. Leiderer

机构：

[1] Universität Konstanz,Fakultät für Physik

[2] University of Electro-Communications,undefined

来源：

Journal of Low Temperature Physics | 1997年 / 109卷

关键词：

Present Experiment; Magnetic Material; Applied Voltage; Relaxation Process; Concentration Dependence;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report the growth kinetics of the4He crystals with a small amount of3He impurities around 0.8 K. The growth resistance was measured using the response of the charged interface with respect to an externally applied voltage. In 5 ppm and 10 ppm3He mixtures, it is found that (1) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure4He and does not have a strong3He concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as pure4He. We discuss several possible explanations of the present experiment.

引用

页码：357 / 367

页数：10

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