Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors

被引：0
|
作者：
Kagirina K.A. [1 ]
Fedorov Y.V. [1 ]
Lavrukhin D.V. [1 ]
Gamkrelidze S.A. [1 ]
Gnatyuk D.L. [1 ]
Zuev A.V. [1 ]
Ruban O.A. [1 ]
Gromov D.V. [2 ]
机构：
[1] Institute of Ultrahigh Frequency Semiconductor Electronics, Moscow
[2] National Research Nuclear University “MEPhI,”, Moscow
来源：
Russian Microelectronics | 2017年 / 46卷 / 3期
关键词：
D O I：
10.1134/S1063739717030039
中图分类号：
学科分类号：
摘要：
The research results of the resistance of signal converters with the operating frequency of 57–64 GHz, manufactured at the Institute of Ultrahigh Frequency Semiconductor Electronics on AlGaN/GaN/Al2O3 heterostructures to the action of special factors such as neutron and gamma radiation are presented. The results of evaluation of the long-term stability of the signal converters at high temperature are also discussed. The possible physical mechanisms of the changing characteristics are considered. © 2017, Pleiades Publishing, Ltd.
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页码：149 / 154
页数：5
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