Concept of deterministic single ion doping with sub-nm spatial resolution

被引:0
|
作者
J. Meijer
T. Vogel
B. Burchard
I.W. Rangelow
L. Bischoff
J. Wrachtrup
M. Domhan
F. Jelezko
W. Schnitzler
S.A. Schulz
K. Singer
F. Schmidt-Kaler
机构
[1] Ruhr-Universität Bochum,RUBION
[2] Ruhr-Universität Bochum,Institut für Physik mit Ionenstrahlen
[3] Universität Kassel,Institut für Nanostrukturtechnologie und Analytik (INA)
[4] Forschungszentrum Rossendorf e.V.,Institute of Ion Beam Physics and Materials Research
[5] Universität Stuttgart,Physikalisches Institut
[6] Universität Ulm,Abteilung Quanten
来源
Applied Physics A | 2006年 / 83卷
关键词
Electromagnetically Induce Transparency; Paul Trap; Linear Paul Trap; Quantum Gate Operation; Ground State Cool;
D O I
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中图分类号
学科分类号
摘要
We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less than 1 nm. Furthermore, the method is expected to work for almost all chemical elements. The deterministic implantation of single phosphor or nitrogen atoms is interesting for the fabrication of scalable solid state quantum computers, in particular for silicon and diamond based schemes. A wide range of further applications is expected for the fabrication of nano and sub-nano electronic devices.
引用
收藏
页码:321 / 327
页数:6
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