A novel deep gate power MOSFET in partial SOI technology for achieving high breakdown voltage and low lattice temperature

被引：0
作者：
Amir Gavoshani
Ali A. Orouji
机构：
[1] Semnan University,Electrical and Computer Engineering Department
来源：
Journal of Computational Electronics | 2021年 / 20卷
关键词：
Index terms-LDMOS; Partial SOI; Breakdown voltage; Deep gate; Lattice temperature; Specific on-resistance; Power MOSFET;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We propose a novel deep gate lateral double diffused metal-oxide-semiconductor (LDMOS) field-effect transistor in partial silicon-on-insulator (PSOI) technology for achieving high breakdown voltage and reduced power dissipation. In the proposed device, an N+ well is inserted in the buried oxide under the drain region. By optimizing the N+ well and the lateral distance between the buried oxide and the left side of the device, the electric field is modified. Therefore, the breakdown voltage improves. Also, the PSOI technology used in the proposed structure has a significant effect on reducing the lattice temperature. Our simulation results show that the proposed structure improves the breakdown voltage by about 67.5% and reduces the specific on-resistance by about 20% in comparison with a conventional LDMOS.
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页码：1513 / 1519
页数：6
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