Optically-active metastable defects in volumetric nanoplasmonic composites

被引:0
作者
Marcin Gajc
Hancza B. Surma
Dorota A. Pawlak
机构
[1] Institute of Electronic Materials Technology (ITME),Chemistry Department
[2] University of Warsaw,undefined
来源
Scientific Reports | / 8卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Metastable defects in semiconductor materials have been well known for decades, but have only recently started to attract attention for their potential applications in information technology. Here, we describe active and passive nanoplasmonic materials with optically active metastable defects that can be switched on or off by cooling with or without laser illumination, respectively. To the best of our knowledge, this is the first report of metastable defects in either passive or active nanoplasmonic materials, and, more generally, in non-semiconducting materials. The nanocomposites are made of a sodium-boron-phosphate glass matrix doped with silver nanoparticles (nAg) or co-doped with nAg and Er3+ ions by NanoParticle Direct Doping method. We further show that the different origins of the two types of defect-related luminescence behaviour are attributable to either a metal-glass defect (MG1) or a metal-glass-rare-earth ion defect (MGR1). Such materials could potentially be used for data writing and erasing using laser illumination with a ‘tight’ focus such as direct laser writing.
引用
收藏
相关论文
共 120 条
[1]  
Baraff GA(1985)Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator of EL 2? Phys. Rev. Lett. 55 2340-456
[2]  
Schluter M(1988)Analysis of photoassisted thermal recovery of metastable EL2 defects in GaAs Phys. Rev. B 37 6368-133
[3]  
Parker JC(1988)Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL2? Phys. Rev. Lett. 60 2183-1822
[4]  
Bray R(1988)Metastability of the Isolated Arsenic-Antisite Defect in GaAs Phys. Rev. Lett. 60 2187-830
[5]  
Dabrowski J(1983). Lett. 43 302-204
[6]  
Scheffler M(1998)Observation of optically-active metastable defects in undoped GaN epilayers Appl. Phys. Lett. 72 2451-453
[7]  
Chadi DJ(2003)Investigation of optical metastability in GaN using photoluminescence spectroscopy Physica B 340-342 452-1112
[8]  
Chang KJ(1991)A spectrocopic study of a metastable defect in silicon Semicond. Sci. Technol. 6 130-483
[9]  
Kaminska M(1984)Extrinsic self-trapping and negative U in semiconductors: A metastable center in InP Phys. Rev. B 30 832-213
[10]  
Skowronski M(1998)Holographic storage media based on optically active bistable defects J. Appl. Phys. 83 661-4