Si/Si1−xGex epitaxial layers and superlattices. Growth and structural characteristics

被引：0

作者：

F. F. Sizov

V. P. Klad’ko

S. V. Plyatsko

A. P. Shevlyakov

Yu. N. Kozyrev

V. M. Ogenko

机构：

[1] Ukrainian National Academy of Sciences,Institute of Semiconductor Physics

[2] National Ukrainian Academy of Sciences,Institute of Surface Chemistry

来源：

Semiconductors | 1997年 / 31卷

关键词：

Spectroscopy; Silicon; Structural Characteristic; Auger; Magnetic Material;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Si, Ge, and Si1−xGex epitaxial layers and Si/Si1−xGex superlattices have been obtained on (100) and (111) silicon substrates by molecular-beam epitaxy. The growth processes and the structural characteristics and chemical composition of the structures were studied by x-ray diffraction and Auger spectroscopy. It is shown that under the experimental conditions for obtaining Si/Si1−xGex superlattices structurally perfect, strained superlattices with satellites up to ±5 orders can be obtained.

引用

页码：786 / 788

页数：2

共 9 条

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[6] Wegscheider W.(undefined)undefined undefined undefined undefined-undefined
[7] Abstreiter G.(undefined)undefined undefined undefined undefined-undefined
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[9] Gay J. G.(undefined)undefined undefined undefined undefined-undefined

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