Deposition of silicon oxynitride films by ion beam sputtering at room temperature

被引：0
作者：
Huang-Lu Chen
Jin-Cherng Hsu
机构：
[1] Fu-Jen Catholic University,Graduate Institute of Applied Science and Engineering
[2] Fu-Jen Catholic University,Department of Physics
来源：
Optical Review | 2009年 / 16卷
关键词：
IBSD; ion beam sputtering; silicon oxynitride; room temperature;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Silicon oxynitride films, possessing various compounds of SiO2 and Si3N4, were deposited by ion beam sputtering at room temperature. This technique can easily and precisely control the refractive index and composition of the silicon oxynitride film. Properties of these films, such as the refractive index, the extinction coefficient, the surface roughness, and so on were measured in this study.
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页码：226 / 228
页数：2
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