Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films

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作者：
H. Puszkarski
P. Tomczak
机构：
[1] Faculty of Physics,Surface Physics Division
[2] Adam Mickiewicz University,Quantum Physics Division
[3] ul. Umultowska 85,undefined
[4] Faculty of Physics,undefined
[5] Adam Mickiewicz University,undefined
[6] ul. Umultowska 85,undefined
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Scientific Reports | / 4卷
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摘要：
The source of spin-wave resonance (SWR) in thin films of the ferromagnetic semiconductor (Ga,Mn)As is still under debate: does SWR stem from the surface anisotropy (in which case the surface inhomogeneity (SI) model would apply), or does it originate in the bulk inhomogeneity of the magnetic structure of the sample (and thus requires the use of the volume inhomogeneity (VI) model)? This paper outlines the ground on which the controversy arose and shows why in different conditions a resonance sample may meet the assumptions of either the SI or the VI model.
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