机构:Stanford University,Department of Applied Physics
Seung Sae Hong
Desheng Kong
论文数: 0引用数: 0
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机构:Stanford University,Department of Applied Physics
Desheng Kong
Yi Cui
论文数: 0引用数: 0
h-index: 0
机构:Stanford University,Department of Applied Physics
Yi Cui
机构:
[1] Stanford University,Department of Applied Physics
[2] Stanford University,Department of Materials Science and Engineering
[3] SLAC National Accelerator Laboratory,Department of Materials Science and Engineering, Stanford Institute for Materials and Energy Sciences
来源:
MRS Bulletin
|
2014年
/
39卷
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暂无
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学科分类号:
摘要:
Electrons in topological insulators possess unique electronic band structures and spin properties, promising a novel route to engineer material properties for electronics and energy science. Enhancing the surface state signal in electron transport is critical for both fundamental study of the surface states and future applications. Nanostructures of topological insulators naturally have large surface-to-volume ratios, effectively increasing the surface transport compared to the bulk contribution. Moreover, the unique morphology of topological insulator nanostructures results in various quantum effects of electronic states, which can tailor the surface band via quantum confinement. Here we review recent progress in topological insulator nanostructures. Material design and electron transport of topological insulator nanostructures are introduced, with an emphasis on the unique properties of nanostructures. A few examples of applications and future perspective in using these nanostructures are also discussed.
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Univ Hong Kong, Ctr Computat & Theoret Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Li, Jian
Chu, Rui-Lin
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机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Univ Hong Kong, Ctr Computat & Theoret Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Chu, Rui-Lin
Jain, J. K.
论文数: 0引用数: 0
h-index: 0
机构:
Penn State Univ, Dept Phys, Davey Lab 104, University Pk, PA 16802 USAUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Jain, J. K.
Shen, Shun-Qing
论文数: 0引用数: 0
h-index: 0
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Univ Hong Kong, Ctr Computat & Theoret Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Univ Hong Kong, Ctr Computat & Theoret Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Li, Jian
Chu, Rui-Lin
论文数: 0引用数: 0
h-index: 0
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Univ Hong Kong, Ctr Computat & Theoret Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Chu, Rui-Lin
Jain, J. K.
论文数: 0引用数: 0
h-index: 0
机构:
Penn State Univ, Dept Phys, Davey Lab 104, University Pk, PA 16802 USAUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Jain, J. K.
Shen, Shun-Qing
论文数: 0引用数: 0
h-index: 0
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Univ Hong Kong, Ctr Computat & Theoret Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China