Doping-concentration-dependent electric and thermoelectric properties of 2-dimensional silicon thin films

被引：0
作者：
Junsoo Kim
Soo-Jung Kim
Jung Yoon Kwon
Wonchul Choi
Hyuk Jin Kim
Taekwang Kim
Sol Yee Im
Jaewoo Lee
Seung-Min Lee
Moongyu Jang
Seung Eon Moon
机构：
[1] Electronics and Telecommunications Research Institute,Dimensional New Devices Research Section
[2] University of Science and Technology,Department of Advanced Engineering
[3] Hallym University,Department of Materials Science & Engineering
来源：
Journal of the Korean Physical Society | 2016年 / 68卷
关键词：
Si; 2-dimension; Thermoelectric;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
To study the electric and the thermoelectric properties of silicon thin films (SiTFs), we fabricated devices having SiTFs by using conventional complementary metal-oxide-semiconductor (CMOS)-compatible processes for mass production and extendibility. The conductivities and the Seebeck coefficients of SiTFs for dose concentrations of 5 × 1014 cm -2, 1 × 1015 cm -2 and 5 × 1015 cm -2 and for temperatures in the range of 310 to 430 K were measured by using homemade setup. The measured power factors of the SiTFs showed a slight increasing tendency with increasing measurement temperature and were maximum at a dose concentration of 1 × 1015 cm -2 for both n- and p-type films at 330 K.
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页码：1472 / 1475
页数：3
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