Preparation and electrical properties of Bi3.25Pr0.75Ti3O12 ferroelectric thin films

被引：0

作者：

D. Wu

A.D. Li

T. Yu

N.B. Ming

机构：

[1] Nanjing University,National Laboratory of Solid State Microstructures and Department of Materials, Science and Engineering

[2] Nanjing University,National Laboratory of Solid State Microstructures and Department of Physics

来源：

Applied Physics A | 2004年 / 78卷

关键词：

Thin Film; Dielectric Constant; Electrical Property; Film Surface; Impedance Measurement;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Bi3.25Pr0.75Ti3O12 (BPT) ferroelectric thin films have been prepared by chemical solution deposition on platinized Si substrates. Well-crystallized BPT films can be achieved by 600 °C rapid thermal annealing. The film surface is smooth and crack-free, composed of uniform spherical grains around 90–100 nm in diameter. The electrical properties of Pt/BPT/Pt thin film capacitors were characterized by hysteresis and impedance measurements. The remanent polarization of 700 °C annealed BPT films is around 20 μC/cm2 at 120-kV/cm stimulus field. The dielectric constant is around 380 at 10 kHz, 100-mV amplitude. The remanent polarization of BPT film showed a slight reduction, 10% of its original value, after 2.8×109 cycles, while a ∼30% reduction of non-volatile polarization was observed.

引用

页码：95 / 99

页数：4