On the annealing of radiation-induced point defects in tungsten

被引：3
|
作者：
Ryabtsev S.A. [1 ]
Gasparyan Y.M. [1 ]
Zibrov M.S. [1 ]
Pisarev A.A. [1 ]
机构：
[1] National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow
来源：
J. Surf. Invest. | / 3卷 / 658-662期
基金：
欧盟地平线“2020”;
关键词：
defect annealing; deuterium; radiation-induced defects; thermal desorption spectroscopy; tungsten;
D O I：
10.1134/S1027451016030332
中图分类号：
学科分类号：
摘要：
The interaction between deuterium and radiation-induced point defects in tungsten and the stages of their transformation and annealing are investigated by means of thermal-desorption spectroscopy. Primary defects, mainly vacancies, are created using 10-keV D+ ions at room temperature. In investigating the evolution of radiation-induced defects, irradiated samples are annealed at temperatures of 550–1400 K and the subsequent filling of defects is carried out by deuterium after sample irradiation with D3 + ions with an energy of 0.67 keV/deuteron at room temperature. The characteristic positions of thermal desorption peaks, as well as the temperatures of vacancy clusterization and annealing of defects, are determined. © 2016, Pleiades Publishing, Ltd.
引用
收藏
页码：658 / 662
页数：4
相关论文
共 50 条
  • [41] Effect of low-temperature annealing on characteristics of SiC detectors with radiation-induced defects
    A. M. Ivanov
    N. B. Strokan
    A. V. Sadokhin
    A. A. Lebedev
    Semiconductors, 2007, 41 : 979 - 983
  • [42] Effect of low-temperature annealing on characteristics of SiC detectors with radiation-induced defects
    Ivanov, A. M.
    Strokan, N. B.
    Sadokhin, A. V.
    Lebedev, A. A.
    SEMICONDUCTORS, 2007, 41 (08) : 979 - 983
  • [43] Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structures
    Kaschieva, S
    Dmitriev, SN
    Skorupa, W
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 78 (04): : 607 - 610
  • [44] INJECTION AND ANNEALING OF RADIATION-INDUCED DEFECTS INTO TELLURIUM-DOPED N-GASB
    BAKRADZE, SR
    KUKULADZE, GV
    INORGANIC MATERIALS, 1988, 24 (06) : 759 - 761
  • [45] ANNEALING OF RADIATION INDUCED DEFECTS IN SILICON
    FANG, PH
    PHYSICS LETTERS, 1966, 20 (04): : 343 - &
  • [46] Impact of radiation-induced point defects on thermal carrier decay processes in GaAs
    Singh, Christopher N.
    Uberuaga, Blas Pedro
    Tobin, Stephen J.
    Liu, Xiang-Yang
    ACTA MATERIALIA, 2023, 242
  • [47] STEADY-STATE DISTRIBUTION OF RADIATION-INDUCED POINT-DEFECTS IN SOLIDS
    LAM, NQ
    ROTHMAN, SJ
    SIZMANN, R
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 371 - 371
  • [48] Theoretical and computational investigation on the radiation-induced point defects in cementite: Picosecond timescale
    Zamzamian, Seyed Mehrdad
    Feghhi, Seyed Amirhossein
    Samadfam, Mohammad
    JOURNAL OF NUCLEAR MATERIALS, 2021, 543
  • [49] THE EFFECT OF POINT RADIATION-INDUCED DEFECTS ON OPTICAL EDGE ABSORPTION IN GAP CRYSTALS
    BRAILOVSKY, EY
    OSTASHKO, NI
    TARTACHNIK, VP
    SHAKHOVTSOV, VI
    UKRAINSKII FIZICHESKII ZHURNAL, 1981, 26 (06): : 973 - 977
  • [50] Properties of radiation-induced point defects in austenitic steels: a molecular dynamics study
    Guo, Wei
    Liang, Yanxiang
    Wan, Qiang
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2024, 32 (05)
12345