On the annealing of radiation-induced point defects in tungsten

被引:3
|
作者
Ryabtsev S.A. [1 ]
Gasparyan Y.M. [1 ]
Zibrov M.S. [1 ]
Pisarev A.A. [1 ]
机构
[1] National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow
来源
J. Surf. Invest. | / 3卷 / 658-662期
基金
欧盟地平线“2020”;
关键词
defect annealing; deuterium; radiation-induced defects; thermal desorption spectroscopy; tungsten;
D O I
10.1134/S1027451016030332
中图分类号
学科分类号
摘要
The interaction between deuterium and radiation-induced point defects in tungsten and the stages of their transformation and annealing are investigated by means of thermal-desorption spectroscopy. Primary defects, mainly vacancies, are created using 10-keV D+ ions at room temperature. In investigating the evolution of radiation-induced defects, irradiated samples are annealed at temperatures of 550–1400 K and the subsequent filling of defects is carried out by deuterium after sample irradiation with D3 + ions with an energy of 0.67 keV/deuteron at room temperature. The characteristic positions of thermal desorption peaks, as well as the temperatures of vacancy clusterization and annealing of defects, are determined. © 2016, Pleiades Publishing, Ltd.
引用
收藏
页码:658 / 662
页数:4
相关论文
共 50 条
  • [21] THERMAL ANNEALING OF RADIATION-INDUCED DEFECTS - A DIFFUSION-LIMITED PROCESS
    BROWN, DB
    MA, DI
    DOZIER, CM
    PECKERAR, MC
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4059 - 4063
  • [22] Mechanism for recombination of radiation-induced point defects at interphase boundaries
    Liu, X. -Y.
    Uberuaga, B. P.
    Demkowicz, M. J.
    Germann, T. C.
    Misra, A.
    Nastasi, M.
    PHYSICAL REVIEW B, 2012, 85 (01)
  • [23] ANNEALING OF RADIATION-INDUCED DEFECTS IN P-TYPE GERMANIUM SAMPLES
    BASMAN, AR
    GERASIMOV, AB
    DOLIDZE, ND
    KAKHIDZE, NG
    KONOVALENKO, BM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1222 - 1223
  • [24] Mechanisms of radiation-induced viscous flow: Role of point defects
    Mayr, SG
    Ashkenazy, Y
    Albe, K
    Averback, RS
    PHYSICAL REVIEW LETTERS, 2003, 90 (05) : 1 - 055505
  • [25] Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing
    Bublik, VT
    Shcherbachev, KD
    Komarnitskaya, EA
    Parkhomenko, YN
    Vygovskaya, EA
    Evgen'ev, SB
    CRYSTALLOGRAPHY REPORTS, 1999, 44 (06) : 1035 - 1041
  • [26] Radiation-induced modifications of point defects in quartz crystals and their application in radiation dosimetry
    Bahadur, H
    RADIATION MEASUREMENTS, 2003, 36 (1-6) : 493 - 497
  • [27] Low-temperature annealing of radiation-induced defects in carbon nanotube bundles
    Danilchenko, B. A.
    Voitsihovska, E. A.
    Rogutski, I. S.
    Rudenko, R. M.
    Uvarova, I. Y.
    Yaskovets, I. I.
    DIAMOND AND RELATED MATERIALS, 2017, 80 : 113 - 117
  • [28] GERMANIUM EFFECT ON THE FORMATION AND ANNEALING OF RADIATION-INDUCED DEFECTS IN NUCLEARLY DOPED SILICON
    KOLIN, NG
    LUGAKOV, PF
    LUKYANITSA, VV
    STUK, AA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1990, 33 (11): : 98 - 102
  • [29] ON THE PHYSICAL MODELS OF ANNEALING OF RADIATION-INDUCED DEFECTS IN AMORPHOUS SIO2
    DEVINE, RAB
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4): : 261 - 264