Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells

被引：0
作者：
Yu. G. Arapov
S. V. Gudina
A. S. Klepikova
V. N. Neverov
S. M. Podgornykh
M. V. Yakunin
B. N. Zvonkov
机构：
[1] Russian Academy of Sciences,Institute of Metal Physics, Ural Branch
[2] Ural Federal University,Physical
[3] Nizhni Novgorod State University,Technical Research Institute
来源：
Semiconductors | 2013年 / 47卷
关键词：
Quantum Hall Effect; Double Quantum; Magnetic Field Rotation; Momentum Relaxation; Parallel Magnetic Field;
D O I：
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摘要：
The effects of tunneling between two parallel two-dimensional electron gases in n-InGaAs/GaAs nanostructures with strongly coupled double quantum wells with a change in the in-plane component of a tilted magnetic field (up to B‖ = 9.0 T) in the temperature range T = 1.8–70.0 K are investigated. A nonmonotonic temperature dependence of the inverse quantum lifetime τq−(T) is obtained from analysis of the dependence of the longitudinal resistance on the parallel component of the tilted magnetic field at fixed temperatures, ρxx(B‖, T). The quadratic portion of this dependence is found to be due to the contribution of inelastic electron-electron scattering. The decrease in the inverse quantum lifetime τq−(T) at T > 0.1TF cannot be described within known theories; it seems, it is not related to the processes of electron momentum relaxation.
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页码：1447 / 1451
页数：4
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