Siloxane Composition for the Passivation of p–n Junctions of High-Voltage Semiconductor Devices

被引：0

作者：

Neelova O.V. ^{[1
]}

机构：

[1] North Ossetian State University, Vladikavkaz

来源：

Polymer Science, Series D | 2018年 / 11卷 / 2期

关键词：

adhesion of coatings; corrosive passivity; heat resistance of coatings; high-voltage semiconductor devices; polydimethylboronzirconosiloxane; tributylphosphate and boron-oxide adduct;

D O I：

10.1134/S1995421218020120

中图分类号：

学科分类号：

摘要：

A one-component organosilicon composition based on purified polydimethylboronzirconosiloxane and a curing system including a tributylphosphate and boron-oxide-adduct solution in triethoxysilane was developed. It was shown that the developed composition, which was called the KAE sublayer, can be recommended for the passivation of p–n junctions of high-voltage semiconductor devices operated under the conditions of the effect of increased temperatures, electric voltages, and humidity. © 2018, Pleiades Publishing, Ltd.

引用

页码：159 / 164

页数：5

共 50 条

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