Implantation induced defects and electrical properties of Sb-implanted ZnO

被引：0
作者：
Hui Xie
Tong Liu
JingMing Liu
KeWei Cao
ZhiYuan Dong
Jun Yang
YouWen Zhao
机构：
[1] Chinese Academy of Sciences,Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor
来源：
Science China Technological Sciences | 2015年 / 58卷
关键词：
ZnO; photoluminescence; Ramam scattering; Hall measurement; ion implantation; defect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Defects in Sb implanted ZnO single crystals have been studied by using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) and Raman scattering. Electrical properties of the samples were analyzed by Hall effect measurement. The results indicate that the annealed Sb-implanted sample is n-type with a free electron concentration of the same amplitude as the calculated implantation concentration. The well-known oxygen vacancy related deep level green PL band is suppressed in the as-implanted sample and recovers to the level close to the as-grown ZnO single crystal after annealing. These phenomena suggest that a large portion of as-implanted Sb atoms occupy oxygen lattice site in an unstable state and move to the interstitial site, forming the complex donor defect upon high temperature annealing, resulting in n-type conduction even if the implantation dose is quite high.
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页码：1333 / 1338
页数：5
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