AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy

被引：0

作者：

Yosuke Tamura

Kazuhiro Hane

机构：

[1] Graduate School of Engineering Tohoku University,Department of Nanomechanics

来源：

Nanoscale Research Letters | 2015年 / 10卷

关键词：

AlN; Nanostructure; Nanowall; MBE; Si substrate; Epitaxial growth; XRD; 81.07.BC; 61.46.Hk; 61.46.Df;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60–120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec.

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