Infrared quenching of electroluminescence in ZnS:Mn thin-film emitters

IR irradiation of electroluminescent emitters based on thin ZnS:Mn films in the pause between excitation voltage pulses produces quenching of the luminescence and leads to a decrease in the emission intensity within the wavelength interval 530–540 nm and an increase within 640–680 nm. These phenomena are explained by the IR-radiation-induced recharge of the deep centers related to the sulfur vacancies VS2+ and VS+, whereby the concentration of the latter centers increases, and redistribution of the channels of impact excitation of Mn2+ and VS+ centers in favor of the latter type.