Cathodoluminescence studies of exciton diffusion in gallium nitride

被引：1
|
作者：
Polyakov A.N. [1 ]
Stepovich M.A. [1 ,2 ]
Turtin D.V. [2 ]
机构：
[1] Tsiolkovsky Kaluga State University, Kaluga
[2] Plekhanov Russian University of Economics, Ivanovo Branch, Ivanovo
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2016年 / 10卷 / 3期
关键词：
cathodoluminescence; diffusion; electron microscopy; exciton; gallium nitride; mathematical modeling;
D O I：
10.1134/S1027451016030149
中图分类号：
学科分类号：
摘要：
Gallium nitride is used as an example to show the possibilities of the application of a developed threedimensional mathematical model in the cathodoluminescence studies of direct-gap semiconductor materials using the time-of-flight procedure for obtaining quantitative information on their properties. The values of the diffusion coefficient in gallium nitride are determined from the results of its experimental studies. © 2016, Pleiades Publishing, Ltd.
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页码：563 / 566
页数：3
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