Electrical characterizations of Neutron-irradiated SiC Schottky diodes

被引：0
|
作者：
Geunwoo Ko
Hong-Yeol Kim
Joona Bang
Jihyun Kim
机构：
[1] Korea University,Department of Chemical and Biological Engineering
来源：
Korean Journal of Chemical Engineering | 2009年 / 26卷
关键词：
Neutron Irradiation; Silicon Carbide; Diode;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.
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页码：285 / 287
页数：2
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