Electrical characterizations of Neutron-irradiated SiC Schottky diodes

被引：0

作者：

Geunwoo Ko

Hong-Yeol Kim

Joona Bang

Jihyun Kim

机构：

[1] Korea University,Department of Chemical and Biological Engineering

来源：

Korean Journal of Chemical Engineering | 2009年 / 26卷

关键词：

Neutron Irradiation; Silicon Carbide; Diode;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.

引用

页码：285 / 287

页数：2

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