Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4 –PVP interfacial layers

被引：0
作者：
İ. Taşçıoğlu
G. Pirgholi-Givi
S. Altındal Yerişkin
Y. Azizian-Kalandaragh
机构：
[1] Istanbul Topkapi University,Department of Electrical and Electronics Engineering, Faculty of Engineering
[2] University of Mohaghegh Ardabili,Department of Engineering Sciences, Faculty of Advanced Technologies
[3] Sabalan University of Advanced Technologies (SUAT),Department of Engineering Sciences, Faculty of Advanced Technologies
[4] Gazi University,Vocational Highschool of Technical Sciences, Department of Chemistry and Chemical Processing Technologies
[5] Gazi University,Photonics Application and Research Center
[6] Gazi University,Photonics Department, Faculty of Applied Sciences
来源：
Journal of Sol-Gel Science and Technology | 2023年 / 107卷
关键词：
ZnO–PVP and ZnO/Ag; WO; –PVP interfacial layers; Comparison of the main electrical parameters; Interface states; Cheung’s and Norde’s methods; Pool Frenkel Emission;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
ZnO–PVP and ZnO/Ag2WO4–PVP nanocomposites were hydrothermally synthesized and coated on n-Si using spin-coating method.The crystalline structure and morphological characteristics of ZnO/Ag2WO4 nanocomposites were studied by XRD and SEM-EDX.The electrical measurements show that ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers improve the fabricated diodes’ interface quality and performance parameters.The reverse-biased conduction mechanism of the Au/n-Si (MS), Au/ZnO–PVP/n-Si (MPS1), and Au/(ZnO/Ag2WO4–PVP)/n-Si (MPS2) SDs was evaluated using Schottky or Poole-Frenkel Emission model.
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页码：536 / 547
页数：11
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