Structural and noise characterization of VO2 films on SiO2/Si substrates

被引:0
作者
M. V. Baidakova
A. V. Bobyl’
V. G. Malyarov
V. V. Tret’yakov
I. A. Khrebtov
I. I. Shaganov
机构
[1] St. Petersburg State Technical University,
来源
Technical Physics Letters | 1997年 / 23卷
关键词
Lattice Defect; Noise Intensity; Interstitial Site; Flicker Noise; Versus Atom;
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学科分类号
摘要
Multi-technique structural and electrophysical investigations of VO2 films on SiO2/Si substrates are carried out to study the microscopic nature of fluctuator defects — sources of lowfrequency flicker noise. It is established that the noise intensity is determined by the magnitude of the microstress fluctuations 〈ε 〉={〈(δc/c)2〉}, where c is the lattice parameter along the c-axis parallel to [011] direction in the blocks of which the film is formed. The dimensions of the blocks were determined in the direction of the c-axis (tc∼1000 Å). The suggestion is put forward that the samples contain two types of fluctuator defects: 1) V atoms jumping between the two nearest interstitial sites and 2) V atoms jumping between these interstitial sites near lattice defects.
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页码:520 / 522
页数:2
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