Chemically stimulated synthesis of gas-sensing films on the surface of GaAs

被引：0

作者：

V. F. Kostryukov

I. Ya. Mittova

A. A. Dimitrenko

机构：

[1] Voronezh State University,

来源：

Inorganic Materials | 2017年 / 53卷

关键词：

semiconductors; gallium arsenide; thermal oxidation; thin films; gas sensitivity;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Thin nanofilms have been grown on the surface of GaAs via chemically stimulated thermal oxidation. The thickness of the oxide films on the surface of GaAs has been shown to be a nonlinear function of the composition of the mixture of the chemical oxide stimulators. The oxide films obtained, consisting predominantly of Ga2O3, contain small amounts (≤3 at %) of Sb2O3 and V2O5 and exhibit gas-sensing properties in ammonia and carbon monoxide atmospheres, with the highest NH3 sensitivity of 1.29 in the temperature range 200–240°C and the highest CO sensitivity of 1.26 in the range 180–220°C.

引用

页码：451 / 456

页数：5

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