Bulk GaN layers grown on oxidized silicon by vapor-phase epitaxy in a hydride-chloride system

被引：0

作者：

Yu. V. Zhilyaev

S. D. Raevskii

D. Z. Grabko

D. S. Leu

M. E. Kompan

Sh. A. Yusupova

M. P. Shcheglov

机构：

[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute

[2] State University of Moldova,undefined

[3] Moldova Academy of Sciences of Moldova,undefined

来源：

Technical Physics Letters | 2005年 / 31卷

关键词：

Silicon; Charge Carrier; Mechanical Strength; Emission Band; Carrier Density;

D O I：

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学科分类号：

摘要：

Bulk GaN layers with a thickness of up to 1.5 mm and a lateral size of 50 mm were grown by hydride-chloride vapor-phase epitaxy (HVPE). The best samples show a half-width (FWHM) of the X-ray rocking curve of ωθ=27′, a charge carrier density of ∼8 × 1019 cm−3, and a mobility of ∼50 cm2/(V s). The photoluminescence spectra of the obtained epitaxial GaN layers exhibit an edge emission band at 348 eV. The HVPE layers are characterized by a high mechanical strength: HV = 14 GPa.

引用

页码：367 / 369

页数：2