Bulk GaN layers grown on oxidized silicon by vapor-phase epitaxy in a hydride-chloride system

被引：0

作者：

Yu. V. Zhilyaev

S. D. Raevskii

D. Z. Grabko

D. S. Leu

M. E. Kompan

Sh. A. Yusupova

M. P. Shcheglov

机构：

[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute

[2] State University of Moldova,undefined

[3] Moldova Academy of Sciences of Moldova,undefined

来源：

Technical Physics Letters | 2005年 / 31卷

关键词：

Silicon; Charge Carrier; Mechanical Strength; Emission Band; Carrier Density;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Bulk GaN layers with a thickness of up to 1.5 mm and a lateral size of 50 mm were grown by hydride-chloride vapor-phase epitaxy (HVPE). The best samples show a half-width (FWHM) of the X-ray rocking curve of ωθ=27′, a charge carrier density of ∼8 × 1019 cm−3, and a mobility of ∼50 cm2/(V s). The photoluminescence spectra of the obtained epitaxial GaN layers exhibit an edge emission band at 348 eV. The HVPE layers are characterized by a high mechanical strength: HV = 14 GPa.

引用

页码：367 / 369

页数：2

共 31 条

[1] Bulk GaN layers grown on oxidized silicon by vapor-phase epitaxy in a hydride-chloride system
Zhilyaev, YV
Raevskii, SD
Grabko, DZ
Leu, DS
Kompan, ME
Yusupova, SA
Shcheglov, MP
TECHNICAL PHYSICS LETTERS, 2005, 31 (05) : 367 - 369
[2] Raman and infrared spectroscopy of GaN nanocrystals grown by chloride-hydride vapor-phase epitaxy on oxidized silicon
V. N. Bessolov
Yu. V. Zhilyaev
E. V. Konenkova
V. A. Fedirko
D. R. T. Zahn
Semiconductors, 2003, 37 : 940 - 943
[3] Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy
S. I. Stepanov
D. V. Tsvetkov
A. E. Cherenkov
Technical Physics Letters, 1998, 24 : 813 - 815
[4] Preparation of high-quality epitaxial silicon layers by vapor-phase epitaxy
Samoǐlov N.A.
Eliseev A.V.
Shutov S.V.
Technical Physics, 1997, 42 (2) : 241 - 242
[5] Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy
Malguth, E.
Hoffmann, A.
Phillips, M. R.
JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
[6] Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Reveret, F.
Andre, Y.
Gourmala, O.
Leymarie, J.
Mihailovic, M.
Lagarde, D.
Gil, E.
Castelluci, D.
Trassoudaine, A.
JOURNAL OF CRYSTAL GROWTH, 2015, 421 : 27 - 32
[7] GaN grown by hydride-metal organic vapor phase epitaxy (H-MOVPE) on lattice-matched oxide and silicon substrates
Mastro, M
Kryliouk, OM
Dann, T
Anderson, TJ
Nikolaev, AE
Melnik, YV
Dmitriev, VA
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1473 - 1476
[8] Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations
Horita, Masahiro
Takashima, Shinya
Tanaka, Ryo
Matsuyama, Hideaki
Ueno, Katsunori
Edo, Masaharu
Takahashi, Tokio
Shimizu, Mitsuaki
Suda, Jun
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (03)
[9] Boron doping of silicon layers grown by liquid phase epitaxy
McCann, MJ
Weber, KJ
Petravic, M
Blakers, AW
JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) : 45 - 50
[10] Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces
Reiher, F.
Dadgar, A.
Blaesing, J.
Wieneke, M.
Krost, A.
JOURNAL OF CRYSTAL GROWTH, 2010, 312 (02) : 180 - 184

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