Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits

被引：2

作者：

Gamkrelidze S.A. ^{[1
]}

Trofimov A.A. ^{[1
]}

Shchavruk N.V. ^{[1
]}

机构：

[1] Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow

来源：

Russian Microelectronics | 2017年 / 46卷 / 05期

关键词：

Timing circuits - Monolithic microwave integrated circuits - Silicon carbide;

D O I：

10.1134/S1063739717050031

中图分类号：

学科分类号：

摘要：

This paper is devoted to developing and optimizing the processing route that improves the effectiveness of diamond dicing of SiC device wafers with monolithic microwave integrated circuits (MMICs). The results of the experimental investigation of the diamond dicing effect on the MMIC parameters in the developed processing route are presented. © 2017, Pleiades Publishing, Ltd.

引用

页码：323 / 328

页数：5

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