Experimental Study of the Insulator-to-Metal Phase Transition in VO2 Thin Films in the Microwave Range

被引：1

作者：

Lelyuk D.P. ^{[1
]}

Mishin A.D. ^{[1
]}

Maklakov S.S. ^{[1
]}

Makarevich A.M. ^{[2
]}

Sharovarov D.I. ^{[2
]}

机构：

[1] Institute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, Moscow

[2] Lomonosov Moscow State University, Moscow

来源：

Inorganic Materials: Applied Research | 2019年 / 10卷 / 04期

关键词：

film resistance; phase transition; quasi-optical microwave measurements; temperature hysteresis; vanadium dioxide;

D O I：

10.1134/S2075113319040245

中图分类号：

学科分类号：

摘要：

Abstract: Temperature dependence of insulator-to-metal phase transition in VO2 epitaxial thin films was studied in the microwave range. Biaxially textured VO2 thin films were obtained on 3-inch sapphire substrates by the method of chemical vapour deposition (MCVD). The change in the electrical resistance with temperature reached approximately 3 orders of magnitude for the obtained films, measured in the metal-insulator phase transition region. Using a high-temperature quasi-optical setup, the microwave features of the phase transition in VO2 thin films were studied at temperature. The hysteresis of microwave properties of the studied samples was observed in the temperature range of VO2 phase transition. © 2019, Pleiades Publishing, Ltd.

引用

页码：775 / 780

页数：5

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